Free Access
Issue
Reflets phys.
Number 81, Juin 2025
Page(s) 6 - 11
Section Dossier : Le diamant
DOI https://doi.org/10.1051/refdp/202581006
Published online 30 juin 2025
  • E. Scorsone, “Smart Material for Smart Sensors: Addressing Future Challenges in Bio/Chemical Sensing with Diamond”, ECS Meeting Abstracts MA2020-01 (2020) 1920. [CrossRef] [Google Scholar]
  • N. Donato et al., “Diamond power devices: state of the art, modelling, figures of merit and future perspective”, Journal of Physics D 53 (2020) 093001. [CrossRef] [Google Scholar]
  • A.H. Henke et al., “Enhancing electrochemical efficiency of hydroxyl radical formation on diamond electrodes by functionalization with hydrophobic monolayers”, Langmuir 35 (2019) 2153-63. [CrossRef] [PubMed] [Google Scholar]
  • E.A. Ekimov et al., “Superconductivity in diamond”, Nature 428 (2004) 542-5 ; E. Bustarret et al., “Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films”, Physical Review Letters 93 (2004) 237005. [CrossRef] [PubMed] [Google Scholar]
  • K.T. Koga et al., “Carbon self-diffusion in a natural diamond”, Physical Review B 72 (2005) 024108. [CrossRef] [Google Scholar]
  • D. G. Pearson et al., “Hydrous mantle transition zone indicated by ringwoodite included within diamond”, Nature 507 (2014) 221–224. [CrossRef] [PubMed] [Google Scholar]
  • A. Traoré et al., “Zr/oxidized diamond interface for high power Schottky diodes”, Applied Physics Letters 104 (2014) 052105. [CrossRef] [Google Scholar]
  • H. Kawarada, “High voltage p-channel MOSFETs using two-dimensional hole gas”, in Power Electronics Device Applications of Diamond Semiconductors 1st ed., eds. S. Koizumi, H. Umezawa,. Pernot et M. Suzuki, Woodhead Publishing (2018). [Google Scholar]
  • H. Umezawa et al., “Diamond Metal– Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV” IEEE Electron Device Letters 35 (2014) 1112–1114. [CrossRef] [Google Scholar]
  • T. Iwasaki et al., “600 V Diamond Junction Field-Effect Transistors Operated at 200° C”, IEEE Electron Device Letters 35 (2014) 241–243. [CrossRef] [Google Scholar]
  • D. Michez et al., “Over 50 mA Current in Interdigitated Diamond Field-Effect Transistor”, IEEE Electron Device Letters 45 (2024) 2058-2061. [CrossRef] [Google Scholar]

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